In addition, SimuLase allows for easy comparisons between experimental and theoretical results. The groundbreaking quality of the underlying microscopic many-body models have been demonstrated in dozens of articles in peer-reviewed journals (see our publications section).
Verified bandstructure inputs derived from the literature or from DFT single electron simulations.
Output data can be easily imported into other commercial higher level device software simulation tools.
An easy to use GUI-interface with dropdown menus allows for easy access to various input controls and allows the user to leverage a host of output features relevant for experimental comparison and publication quality graphics.
Experimentally verified models have led to more than fifty publications in peer-reviewed journals over the last two decades.
You don’t have to be an expert in microscopic, many body physics to take full advantage of this tool. SimuLase™ can automatically preset all relevant parameters allowing the user maximum flexibility in controlling key material’s composition/thickness inputs to achieve a desired solution while exploiting the fit-parameter-free nature of the microscopic models.
Request a FREE DEMO version of SimuLase™ as well as its manual or a quick start guide
AlInGaAsP, includes: GaAs, AlAs, InAs, GaP, AlP, InP, AlxGa1-xAs, InxGa1-xAs, InxAl1- xAs, AlxGayIn1-x-yAs, InxGa1-xP, GaAsxP1-x, InAsxP1-x, AlxGa1-xP, InxGa1-xAsyP1-y, AlxGa1-xAsyP1-y, In1-x(AlyGa1-y)xP (x, y between 0.0 and 1.0).
AlInGaAsSb (may be subject to export restrictions), includes: GaAs, AlAs, InAs, GaSb, AlSb, InSb, AlxGa1-xAs, InxGa1-xAs, InxAl1-xAs, AlxGa1-xSb, InxGa1-xSb, AlxIn1-xSb, GaAsxSb1-x, InAsxSb1-x, AlxGayIn1-x-yAs, AlxGayIn1-x-ySb, AlxGa1-xAsySb1-y, AlxInyGa1-x-yAszSb1-z (x, y, z between 0.0 and 1.0).
AlInGaAsSbBi (may be subject to export restrictions), (dilute Bismide) includes: GaAs,
InAs, GaSb, InSb, InxGa1-xAs, InxGa1-xSb, GaSbxAs1-x, InSbxAs1-x, AlxGa1-xAsySb1- y, AlxGayIn1-x-ySb, AlxInyGa1-x-yAszSb1-z, GaAs1-wBiw, InAs1-wBiw, GaSb1-wBiw, InSb1-wBiw, InxGa1-xAs1-wBiw, InxGa1-xSb1-wBiw, GaSbxAs1-x-wBiw, InSbxAs1-xwBiw, InxGa1-xAsy-wSb1-yBiw (x, y, z between 0.0 and 1.0, w between 0 and 0.2).
AlInGaNAs,(dillute Nitride) includes: GaAs, AlAs, InAs, AlxGa1-xAs, InxGa1-xAs, InxAl1- xAs, AlxGayIn1-x-yAs, GaNzAs1-z, InxGa1-xNzAs1-z (x, y between 0.0 and 1.0, z between 0.0 and 0.2).
Wide bandgap AlInGaN, includes: GaN, AlN, InN, AlxGa1-xN, InxGa1-xN, AlxIn1-xN, AlxGayIn1-x-yN (x, y between 0.0 and 1.0).
Please see its manual for a full description of SimuLase™ and its capabilities.
For any questions regarding SimuLase™, including pricing, please contact us at simulase@nlcstr.com.
All versions include metallization layers (currently Ti, Cr, and Au) and dielectric coatings (currently Si3N4, Al2O3, SiO2, Ta2O5, TiO2, and Y2O3). Other metals and coatings will be included (at no extra cost) upon request. Please contact us for possible versions of SimuLase™ for semiconductor materials outside the mentioned families or customized mixtures.
