High Power, Room Temperature 2.4-4 μm Mid-IR Semiconductor Laser Optimization
FA9550-11-C-0009 (2011). Extension to mid-IR wavelengths of interest for sensing technologies covered GaSb/AlGaSb/InGaSb materials.
High Power, Room Temperature 2.4-4 μm Mid-IR Semiconductor Laser Optimization
FA9550-11-C-0009 (2011). Extension to mid-IR wavelengths of interest for sensing technologies covered GaSb/AlGaSb/InGaSb materials.
